This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
Unit: mm
+0.10
+0.1
–0.0
0.15
0.3
–0.05
■ Features
3
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
1: Base
2: Emitter
3: Collector
12
V
2.5
V
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
ICP
PC
Tj
30
50
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Marking Symbol: 1U
150
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
Min
Typ
Max
100
1
Unit
nA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
µA
VCE = 10 V, IC = 10 mA
40
fT
VCE = 10 V, IC = 10 mA, f = 0.8 GHz
VCB = 10 V, IE = 0, f = 1 MHz
4.5
GHz
pF
Collector output capacitance
Cob
1.2
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2 VCE = 10 V, IC = 20 mA, f = 0.8 GHz
9
12
14
dB
dB
dB
GUM
NF
VCE = 10 V, IC = 20 mA, f = 0.8 GHz
12
VCE = 10 V, IC = 5 mA, f = 0.8 GHz
1.3
2.5
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00144BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3934
S11 , S22
+90°
VCE = 10 V
IC = 20 mA
+120°
+60°
E : Earth
1000 MHz
800 MHz
S21
500 MHz
+150°
+30°
800 MHz
500 MHz
1000 MHz
S12
180°
−10 −15 −20 −25 −30
0°
5
10 15 20
−150°
−30°
−120°
−60°
−90°
SJC00144BED
3
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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